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Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitors

โœ Scribed by M. Dutoit; P. Fazan; A. Benjelloun; M. Ilegems; J.-M. Moret


Book ID
107925613
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
321 KB
Volume
30
Category
Article
ISSN
0169-4332

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โœ S Lombardo; F Crupi; C Spinella; B Neri ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 939 KB

Timeยฑresolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage FowlerยฑNordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin