Charge generation in thin SiO2 polysilicon-gate MOS capacitors
✍ Scribed by P. Fazan; M. Dutoit; C. Martin; M. Ilegems
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 578 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0038-1101
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The generation of defects in ultra-thin SiO gate layers and SiO / ZrO gate stacks is studied through the time-dependent 2 2 2 current density variation DJ (t) 5 J (t) 2 J (0) observed during constant gate voltage stress of MOS capacitors. The time G G G dependence of the defect density variation DN
Time±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage Fowler±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin