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A comparison of radiation and hot-electron-induced damages in MOS capacitors with rapid thermally nitrided thin-gate oxides

โœ Scribed by A.B. Joshi; G.Q. Lo; D.L. Kwong


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
447 KB
Volume
34
Category
Article
ISSN
0038-1101

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