✦ LIBER ✦
Hydrogen concentration and interface state generation due to ionizing radiation in aluminum and polysilicon gate MOS devices
✍ Scribed by S. Scharf; J. Krauser; M. Störring; F. Wulf; D. Bräunig
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 364 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0167-9317
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