Charge Build up and Breakdown in Thin Sio2 Gate Dielectrics
β Scribed by Hillen, M.W.; De Keersmaecker, R.F.; Heyns, M.M.; Haywood, S.K.; Darakchiev, I.S.
- Book ID
- 114621814
- Publisher
- IEEE
- Year
- 1984
- Tongue
- English
- Weight
- 773 KB
- Volume
- EI-19
- Category
- Article
- ISSN
- 0018-9367
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π SIMILAR VOLUMES
A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture
TimeΒ±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage FowlerΒ±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin