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Characterization of NiO thin films deposited by reactive sputtering

✍ Scribed by I Hotový; D Búc; Š Haščík; O Nennewitz


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
398 KB
Volume
50
Category
Article
ISSN
0042-207X

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✦ Synopsis


Nickel oxide (NiO) thin films were deposited by dc reactive magnetron sputtering Ni in an Ar+O, mixed atmosphere at room temperature on unheated Si substrates. The oxygen content in the gas was varied from 10 to 50% and its effect on the deposition rate, structural, composition and electrical properties of the films were studied using thickness measurement, X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectrometry and resistivity measurement.

A correlation between process parameters and film properties was established.


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AlN-films prepared by dc reactive magnetron sputtering. AlN in an Ar+N 2 gas mixture have been prepared and their microstructure, hardness, refractive index and IR transmittance examined. At l = 640 nm the refractive index was 1.93 and k = 3×10 -3 ; high transmission occurred between [??] structure