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Characterization of annealed high-dose oxygen-implanted silicon by spectroscopic ellipsometry and reflectometry

✍ Scribed by Jans, J. C.; Hollering, R. W. J.; Lifka, H.

Book ID
120626349
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
807 KB
Volume
70
Category
Article
ISSN
0021-8979

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Separation by implanted oxygen (SIMOX) substrates from several research production processes including low energy implantation, multiple implantation and low dose studies were characterized using spectroscopic ellipsometry, crosssectional transmission electron microscopy (XTEM) and planar view TEM.