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Cavities in helium implanted and annealed silicon characterized by spectroscopic ellipsometry

✍ Scribed by Fukarek, W.; Kaschny, J. R.


Book ID
120205081
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
544 KB
Volume
86
Category
Article
ISSN
0021-8979

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## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N Γ· ions at a dose of 7.5Γ—1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed