Characterization of oxygen-ion-implanted silicon using spectroscopic ellipsometry and transmission electron microscopy

✍ Scribed by S. Lynch; G.M. Creen; R. Greef; J. Margail; J.M. Lamure; J. Stoemenos

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 297 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90281-d

✦ Synopsis

Separation by implanted oxygen (SIMOX) substrates from several research production processes including low energy implantation, multiple implantation and low dose studies were characterized using spectroscopic ellipsometry, crosssectional transmission electron microscopy (XTEM) and planar view TEM. Silicon and buried silicon dioxide layer thicknesses determined by spectroscopic ellipsometry are shown to be within 2% and 8% of the XTEM measurements respectively. Experimental results indicate that it is doubtful whether a direct correlation can be established between a crystalline quality parameter in the superficial silicon layer, as extracted from spectroscopic ellipsometry data via an effective medium approximation, and the defect density as determined by planar view TEM. These results indicate that the development of a more sophisticated dielectric response model is necessary to mirror accurately the complexity of this microstructure.