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Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

✍ Scribed by Xue, Fei; Jiang, Aiting; Zhao, Han; Chen, Yen-Ting; Wang, Yanzhen; Zhou, Fei; Lee, Jack

Book ID: 120077546
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 434 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2205214

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