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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

✍ Scribed by Radosavljevic, M.; Dewey, G.; Basu, D.; Boardman, J.; Chu-Kung, B.; Fastenau, J. M.; Kabehie, S.; Kavalieros, J.; Le, V.; Liu, W. K.; Lubyshev, D.; Metz, M.; Millard, K.; Mukherjee, N.; Pan, L.; Pillarisetty, R.; Rachmady, W.; Shah, U.; Then, H. W.; Chau, Robert

Book ID: 121325081
Publisher: IEEE
Year: 2011
Weight: 602 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131661

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✍ Radosavljevic, M.; Dewey, G.; Fastenau, J. M.; Kavalieros, J.; Kotlyar, R.; Chu- 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 849 KB

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