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Boron diffusion in strained and strain-relaxed SiGe

✍ Scribed by C.C. Wang; Y.M. Sheu; Sally Liu; R. Duffy; A. Heringa; N.E.B. Cowern; P.B. Griffin

Book ID: 104062151
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 618 KB
Volume: 124-125
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2005.08.127

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✦ Synopsis

SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H.

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