𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Wafer bonding involving strain-relaxed SiGe

✍ Scribed by I. Radu; R. Singh; M. Reiche; U. Gösele; S.H. Christiansen

Book ID
108215238
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
231 KB
Volume
124-125
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

SiGe HBTs on bonded wafer substrates
SiGe HBTs on bonded wafer substrates
✍ S Hall; A.C Lamb; M Bain; B.M Armstrong; H Gamble; H.A.W El Mubarek; P Ashburn 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel select

Boron diffusion in strained and strain-r
Boron diffusion in strained and strain-relaxed SiGe
✍ C.C. Wang; Y.M. Sheu; Sally Liu; R. Duffy; A. Heringa; N.E.B. Cowern; P.B. Griff 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 618 KB

SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H.