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A Si/SiGe MOSFET utilizing low-temperature wafer bonding

✍ Scribed by S. Koliopoulou; P. Dimitrakis; D. Goustouridis; S. Chatzandroulis; P. Normand; D. Tsoukalas; H. Radamson

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
242 KB
Volume
78-79
Category
Article
ISSN
0167-9317

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Low-temperature wafer bonding for MEMS p
Low-temperature wafer bonding for MEMS packaging utilizing screen-printed sub-micron size Au particle patterns
✍ S. Ishizuka; N. Akiyama; T. Ogashiwa; T. Nishimori; H. Ishida; S. Shoji; J. Mizu πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 749 KB

In this study, a new wafer bonding method for MEMS (micro electro mechanical systems) packaging is presented. The seal lines of sub-micron size Au particles with a width of 50 lm were formed on wafers by means of screen-printing. The bonding process was carried out at 300 Β°C under reduced pressure,