✦ LIBER ✦

Defect imaging of SiGe strain relaxed buffers grown by LEPECVD

✍ Scribed by S. Marchionna; A. Virtuani; M. Acciarri; G. Isella; H. von Kaenel

Book ID: 103846546
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 452 KB
Volume: 9
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.09.003

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Rutherford backscattering studies of str

Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers

✍ Watanabe, Yoshinori; Oshima, Ryuji; Sakata, Isao; Matsubara, Koji; Sakamoto, Isa 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 904 KB

XRD analysis of strained Ge–SiGe heteros

XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

✍ N. Franco; N.P. Barradas; E. Alves; A.M. Vallêra; R.J.H. Morris; O.A. Mironov; E 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 201 KB

X-ray imaging and diffraction study of s

X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers

✍ Burle, N.; Escoubas, S.; Kasper, E.; Werner, J.; Oehme, M.; Lyutovich, K. 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 688 KB

Effect of tensile-strained Si layer on p

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers

✍ M. V. Shaleev; A. V. Novikov; A. N. Yablonskiĭ; O. A. Kuznetsov; Yu. N. Drozdov; 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 255 KB

Strain in epitaxial Si/SiGe graded buffe

Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging

✍ Mermoux, M.; Crisci, A.; Baillet, F.; Destefanis, V.; Rouchon, D.; Papon, A. M.; 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 749 KB

Growth and electron effective mass measu

Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

✍ C.W. Liu; V. Venkataraman 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 504 KB