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X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers

✍ Scribed by Burle, N.; Escoubas, S.; Kasper, E.; Werner, J.; Oehme, M.; Lyutovich, K.


Book ID
118766663
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
688 KB
Volume
10
Category
Article
ISSN
1862-6351

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Strain and relaxation in Si-MBE structur
✍ G. V. Hansson; H. H. Radamsson; Wei-Xin Ni πŸ“‚ Article πŸ“… 1995 πŸ› Springer US 🌐 English βš– 655 KB

High resolution X-ray diffraction measurements have been done on Si(001)-based structures grown by molecular beam epitaxy (MBE). By systematically varying the angle of incidence and the diffraction angle, the diffraction intensity data can be displayed in a two-dimensional X-ray diffraction intensit