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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography

✍ Scribed by Faleev, N.; Sustersic, N.; Bhargava, N.; Kolodzey, J.; Kazimirov, A.Yu.; Honsberg, C.

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