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Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

✍ Scribed by C.W. Liu; V. Venkataraman


Book ID
114194219
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
504 KB
Volume
49
Category
Article
ISSN
0254-0584

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