Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator
β Scribed by XuYan Liu; WeiLi Liu; XiaoBo Ma; ShiLong Lv; ZhiTang Song; ChengLu Lin
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 364 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th
Si 1Γx Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 β’ 10 15 cm Γ2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha