✦ LIBER ✦

Barrier Properties of Amorphous Binary Ta-Ni Thin Films for Cu Interconnection

✍ Scribed by J.S. Fang; T.P. Hsu; H.C. Chen

Book ID: 107453848
Publisher: Springer US
Year: 2007
Tongue: English
Weight: 405 KB
Volume: 36
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-007-0098-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Copper diffusion barrier performance of

Copper diffusion barrier performance of amorphous Ta–Ni thin films

✍ Hua Yan; Yee Yan Tay; Yueyue Jiang; Natalia Yantara; Jisheng Pan; Meng Heng Lian 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 878 KB

Ultrathin amorphous Ni–Ti film as diffus

Ultrathin amorphous Ni–Ti film as diffusion barrier for Cu interconnection

✍ B.T. Liu; L. Yang; X.H. Li; K.M. Wang; Z. Guo; J.H. Chen; M. Li; D.Y. Zhao; Q.X. 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 480 KB

Barrier and seed repair performance of t

Barrier and seed repair performance of thin RuTa films for Cu interconnects

✍ H. Volders; L. Carbonell; N. Heylen; K. Kellens; C. Zhao; K. Marrant; G. Faelens 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 802 KB

Spectroscopic ellipsometry study of thin

Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits

✍ Rudra, S. ;Wächtler, T. ;Friedrich, M. ;Louis, S. J. ;Himcinschi, C. ;Zimmermann 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 439 KB

## Abstract The objective of this work is to study the optical and electrical properties of tantalum nitride and tantalum barrier thin films used against copper diffusion in Si in integrated circuits using spectroscopic ellipsometry in the VUV and UV–visible range. Single layers of tantalum nitride

Radiofrequency dielectric properties of

Radiofrequency dielectric properties of amorphous semiconducting Y–Ba–Cu–O oxide thin films for bolometric detection

✍ Aurélie Gensbittel; Olivier Dubrunfaut; Vishal S. Jagtap; Alain J. Kreisler; Ann 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 563 KB

Properties of reactively sputtered W–B–N

Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si

✍ L. C. Leu; D. P. Norton; L. McElwee-White; T. J. Anderson 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 356 KB