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Copper diffusion barrier performance of amorphous Ta–Ni thin films

✍ Scribed by Hua Yan; Yee Yan Tay; Yueyue Jiang; Natalia Yantara; Jisheng Pan; Meng Heng Liang; Zhong Chen

Book ID
116244852
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
878 KB
Volume
258
Category
Article
ISSN
0169-4332

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An amorphous Ta-Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu/Ta 50 Zr 50 /SiO 2 /Si stack with 50 nm thick amorphous film was prepared by co-sputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650 °C. Examining the therma