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Ballistic Transport in SiGe and Strained-Si MOSFETs

✍ Scribed by G. Curatola; G. Iannaccone


Book ID
111588920
Publisher
Springer
Year
2003
Tongue
English
Weight
163 KB
Volume
2
Category
Article
ISSN
1569-8025

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Application of plasma oxidation to strai
✍ Mika Nishisaka; Tanemasa Asano πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 641 KB

We have applied microwave-plasma oxidation to the gate oxide formation of strained-Si metal-oxide-semiconductor field-effect-transistor (MOSFET). Change in surface morphology of plasma oxidized strained-Si/SiGe is studied using an atomic force microscope (AFM) and compared with thermal oxidation. Th