๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electron transport in the quantum Hall regime in strained Si/SiGe

โœ Scribed by K. Ismail


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
333 KB
Volume
227
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Low electron densities and spin dependen
โœ R. Heemskerk; S.L. Wang; T.M. Klapwijk ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 124 KB

The relaxation of edge channels in the quantum Hall regime is considerably different in Si-MOSFETs than in GaAs/A1GaAs heterostructures due to the different material properties. These differences are also of great importance at low carrier densities (10 is m'2), where an isulating state occurs. Both

Single-electron tunneling in the fractio
โœ C.W.J. Beenakker; B. Rejaei ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 562 KB

A recent mean-field approach to the fractional quantum Hall effect (QHE) is reviewed, with a special emphasis on the application to single-electron tunneling through a quantum dot in a high magnetic field. The theory is based on the adiabatic principle of Greiter and Wilczek, which maps an incompres

Exciton luminescence in the quantum hall
โœ D. Heiman; A. Pinczuk; H. Okamura; M. Dahl; B.S. Dennis; L.N. Pfeiffer; K.W. Wes ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 448 KB

Optical studies in the regime of the quantum Hall effect (QHE) reveal complex behavior related to the strongly interacting 2D electron system. In the following we review our recent investigations of exciton luminescence in high-mobility GaAs electron systems. Several novel phenomena are observed, in