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Low electron densities and spin dependent scattering in the quantum Hall regime in Si-MOSFETs

✍ Scribed by R. Heemskerk; S.L. Wang; T.M. Klapwijk

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 124 KB
Volume: 194-196
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(94)90943-1

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✦ Synopsis

The relaxation of edge channels in the quantum Hall regime is considerably different in Si-MOSFETs than in GaAs/A1GaAs heterostructures due to the different material properties. These differences are also of great importance at low carrier densities (10 is m'2), where an isulating state occurs. Both phenomena have been studied in a Si-MOSFET modified with submicron gaps.

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