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Application of plasma oxidation to strained-Si/SiGe MOSFET

โœ Scribed by Mika Nishisaka; Tanemasa Asano

Book ID
104064202
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
641 KB
Volume
8
Category
Article
ISSN
1369-8001

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โœฆ Synopsis

We have applied microwave-plasma oxidation to the gate oxide formation of strained-Si metal-oxide-semiconductor field-effect-transistor (MOSFET). Change in surface morphology of plasma oxidized strained-Si/SiGe is studied using an atomic force microscope (AFM) and compared with thermal oxidation. The AFM observation is carried out before and after oxidation in an identical area of a single sample. Plasma oxidation at 400 C which proceeds under diffusionlimited condition suppressed nonuniform oxide growth caused by cross-hatch related surface morphology and is able to form gate oxide on strained-Si/SiGe without increase in surface roughness. Strained-Si n-channel MOSFETs on 15%-Ge content wafer were fabricated and the transconductance was enhanced by 70% compared with unstrained Si devices.

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Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th