Application of plasma oxidation to strai
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Mika Nishisaka; Tanemasa Asano
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Article
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2005
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Elsevier Science
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English
β 641 KB
We have applied microwave-plasma oxidation to the gate oxide formation of strained-Si metal-oxide-semiconductor field-effect-transistor (MOSFET). Change in surface morphology of plasma oxidized strained-Si/SiGe is studied using an atomic force microscope (AFM) and compared with thermal oxidation. Th