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Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

✍ Scribed by Zengfeng Di; Miao Zhang; Weili Liu; Ming Zhu; Chenglu Lin; Paul K. Chu

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 312 KB
Volume: 124-125
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2005.08.071

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