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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

โœ Scribed by Kentaro Kutsukake; Noritaka Usami; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Kazuo Nakajima; Baoping Zhang; Yusaburo Segawa


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
228 KB
Volume
224
Category
Article
ISSN
0169-4332

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SiGe-on-insulator material fabrication b
โœ Miao Zhang; Zhenghua An; Chenglu Lin; Paul K. Chu ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 234 KB

Relaxed SiGe-on-insulator (SGOI) is an attractive material to fabricate strained Si structures. Separation-by-implantation-of-oxygen (SIMOX) is a competing method to synthesize SGOI materials. In this work, pseudomorphic SiGe grown directly on Si substrate without any buffer layer SiGe/Si were impla