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Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs

✍ Scribed by Aberg, I.; Cait Ni Chleirigh; Hoyt, J.L.

Book ID
114618215
Publisher
IEEE
Year
2006
Tongue
English
Weight
417 KB
Volume
53
Category
Article
ISSN
0018-9383

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Relaxed SiGe-on-insulator (SGOI) is an attractive material to fabricate strained Si structures. Separation-by-implantation-of-oxygen (SIMOX) is a competing method to synthesize SGOI materials. In this work, pseudomorphic SiGe grown directly on Si substrate without any buffer layer SiGe/Si were impla