Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

✍ Scribed by Mizuno, T.; Sugiyama, N.; Kurobe, A.; Takagi, S.-i.

• Book ID: 114538768
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 166 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.936571