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Atomistic simulation of InGaN/GaN quantum disk LEDs

✍ Scribed by Lopez, Marco; Sacconi, Fabio; Auf der Maur, Matthias; Pecchia, Alessandro; Di Carlo, Aldo

Book ID
113077441
Publisher
Springer
Year
2012
Tongue
English
Weight
484 KB
Volume
44
Category
Article
ISSN
0306-8919

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## Abstract This work presents a theoretical comparison of efficiency in III‐nitride light emitting diodes (LEDs). We simulate non‐, semi‐, and polar devices, and analyze their __I__–__V__ characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structur