Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs
✍ Scribed by Fabio Sacconi; Matthias Auf der Maur; Alessandro Pecchia; Marco Lopez; Aldo Di Carlo
- Book ID
- 112182206
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 367 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1862-6351
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## Abstract In~__x__~Ga~1–__x__~N quantum dots have been fabricated by the selective growth of GaN micro‐pyramid arrays topped with InGaN/GaN quantum wells. The spatially‐ and spectrally‐resolved luminescence properties of these structures were measured using low‐temperature micro‐photoluminescence
## Abstract A high indium‐content blue light‐emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVD‐grown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.