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Strain analysis of InGaN/GaN multi quantum well LED structures

✍ Scribed by S. Şebnem Çetin; M. Kemal Öztürk; S. Özçelik; E. Özbay

Book ID
112069547
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
787 KB
Volume
47
Category
Article
ISSN
0232-1300

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Structural properties of ultrathin InGaN
Structural properties of ultrathin InGaN/GaN quantum wells
✍ Sahonta, S.-L. ;Komninou, Ph. ;Dimitrakopulos, G. P. ;Salcianu, C. ;Thrush, E. J 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 682 KB

## Abstract A high indium‐content blue light‐emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVD‐grown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.