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Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

✍ Scribed by Y.D. Qi; H. Liang; W. Tang; Z.D. Lu; Kei May Lau


Book ID
108165939
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
309 KB
Volume
272
Category
Article
ISSN
0022-0248

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Growth of GaAs and AIGaAs epitaxial layers on both (111)A and (111)B faces ofGaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and A1GaAs layers with excellent surface quality can be grown at relatively low temperatures and V/Ill rat