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GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy

โœ Scribed by Chaiyasit Kumtornkittikul; Masakazu Sugiyama; Yoshiaki Nakano


Book ID
107453642
Publisher
Springer US
Year
2006
Tongue
English
Weight
150 KB
Volume
35
Category
Article
ISSN
0361-5235

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Defect States in Cubic GaN Epilayer Grow
โœ Xu, S.J. ;Or, C.T. ;Li, Q. ;Zheng, L.X. ;Xie, M.H. ;Tong, S.Y. ;Yang, Hui ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 89 KB ๐Ÿ‘ 2 views

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we