Simulation of InGaN quantum well LEDs with reduced internal polarization

✍ Scribed by Andreev, Zhelio ;Römer, Friedhard ;Witzigmann, Bernd

• Book ID: 105366453
• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 417 KB
• Volume: 209
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201100377

✦ Synopsis

Abstract

This work presents a theoretical comparison of efficiency in III‐nitride light emitting diodes (LEDs). We simulate non‐, semi‐, and polar devices, and analyze their I–V characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structural design for nitride devices, with decreased polarization charges, using quaternary AlInGaN material.