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Tight-Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation

✍ Scribed by J. Gleize; A. Di Carlo; P. Lugli; J.M. Jancu; R. Scholz; O. Ambacher; D. Gerthsen; E. Hahn

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 119 KB
Volume: 0
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200390047

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