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Atomistic origin of high-quality “novel SiON gate dielectrics”

✍ Scribed by Keita Yamaguchi; Akira Otake; Kenji Kobayashi; Kenji Shiraishi

Book ID: 104052359
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 673 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.03.118

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