✦ LIBER ✦

CHC degradation of strained devices based on SiON and high-k gate dielectric materials

✍ Scribed by E. Amat; R. Rodríguez; M.B. González; J. Martín-Martínez; M. Nafría; X. Aymerich; P. Verheyen; E. Simoen

Book ID: 104052999
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 461 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.094

No coin nor oath required. For personal study only.

✦ Synopsis

A comparison between the Channel Hot-Carrier (CHC) degradation on strained pMOSFETs with SiGe source/ drain (S/D) based on different gate dielectric materials, as SiON or HfSiON, has been done. The influence of the device channel orientation, channel length and temperature on the CHC damage has been studied.

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