✦ LIBER ✦

Atomic motion of dopant during interfacial silicide formation

✍ Scribed by M. Wittmer; C.-Y. Ting; K.N. Tu

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 285 KB
Volume: 104
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(83)90561-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Boron redistribution during formation of

Boron redistribution during formation of nickel silicides

✍ C. Zaring; H. Jiang; B.G. Svensson; M. Östling 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 477 KB

In-process control of silicide formation

In-process control of silicide formation during rapid thermal processing

✍ J.-M. Dilhac; C. Ganibal; N. Nolhier; P.B. Moynagh; C.P. Chew; P.J. Rosser 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 202 KB

RBS studies of As redistribution during

RBS studies of As redistribution during silicide formation by RTA

✍ Zhou Wei; Yang Genqing; Yu Ning; Zhou Zuyao; Zou Shihchang 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 452 KB

Growth of amorphous silicide during Ti/S

Growth of amorphous silicide during Ti/Si interfacial reactions in multilayer thin films

✍ E. Ma 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 411 KB

Degradation of doped Si regious contacte

Degradation of doped Si regious contacted with transition metal silicides due to metal-dopant compound formation

✍ K. Maex; G. Ghosh; L. Delaey; R. De Keersmaecker 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 60 KB

Dopant redistribution during the formati

Dopant redistribution during the formation of tungsten disilicide by rapid thermal processing

✍ J.C. Dupuy; A. Essaadani; A. Sibai; D. Barbier 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 321 KB

We studied arsenic redistribution with annealing time in the Si-W system during the formation of WSi 2 by rapid thermal processing at 850 °C. The silicon was arsenic doped and the tungsten was deposited by sputtering. A significant amount of arsenic diffuses back and segregates at the WSi2-Si interf