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Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III–V MOS devices

✍ Scribed by Min, K.S.; Kang, S.H.; Kim, J.K.; Jhon, Y.I.; Jhon, M.S.; Yeom, G.Y.

Book ID: 122380022
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 595 KB
Volume: 110
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2013.03.170

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