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Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications

✍ Scribed by Won Suk Yang; Yeong Kwan Kim; Seung-Yeal Yang; Jin Hwak Choi; Heung Soo Park; Sang In Lee; Ji-Beom Yoo

Book ID: 108422760
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 296 KB
Volume: 131
Category: Article
ISSN: 0257-8972
DOI: 10.1016/s0257-8972(00)00763-5

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