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[IEEE 2011 International Conference on Communication and Industrial Application (ICCIA) - Kolkata, West Bengal, India (2011.12.26-2011.12.28)] 2011 International Conference on Communication and Industrial Application - Comparative thermal noise analysis of DG MOSFET using SiO2, SiC-SiO2, Si3N4-SiO2, SiO2-Al2O3 as dielectric layer

✍ Scribed by Dash, Suryadeepta; Panda, S.; Maji, B.; Mukhopadhyay, A. K.


Book ID
111971998
Publisher
IEEE
Year
2011
Weight
270 KB
Volume
0
Category
Article
ISBN
1457719169

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