Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices

✍ Scribed by Min, K.S.; Kang, S.H.; Kim, J.K.; Yum, J.H.; Jhon, Y.I.; Hudnall, Todd W.; Bielawski, C.W.; Banerjee, S.K.; Bersuker, G.; Jhon, M.S.; Yeom, G.Y.

• Book ID: 122329370
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 701 KB
• Volume: 114
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2013.10.003