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Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

✍ Scribed by Alles, Harry ;Aarik, Jaan ;Aidla, Aleks ;Fay, Aurelien ;Kozlova, Jekaterina ;Niilisk, Ahti ;Pärs, Martti ;Rähn, Mihkel ;Wiesner, Maciej ;Hakonen, Pertti ;Sammelselg, Väino


Book ID
111489205
Publisher
Walter de Gruyter GmbH
Year
2011
Tongue
English
Weight
987 KB
Volume
9
Category
Article
ISSN
2391-5471

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TiO 2 thin films have been grown on amorphous soda lime glass and polycrystalline silicon substrates from TiI 4 and H 2 O 2 by atomic layer deposition (ALD) in the temperature range 250±490 C. The film growth rate and refractive index increased linearly with growth temperature up to 300 C. Between 3