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Real-Time Monitoring in Atomic Layer Deposition of TiO 2 from TiI 4 and H 2 O−H 2 O 2

✍ Scribed by Kukli, Kaupo; Aidla, Aleks; Aarik, Jaan; Schuisky, Mikael; Hårsta, Anders; Ritala, Mikko; Leskelä, Markku


Book ID
120195640
Publisher
American Chemical Society
Year
2000
Tongue
English
Weight
175 KB
Volume
16
Category
Article
ISSN
0743-7463

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Atomic Layer Deposition of Titanium Oxid
✍ K. Kukli; M. Ritala; M. Schuisky; M. Leskelä; T. Sajavaara; J. Keinonen; T. Uust 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 534 KB

TiO 2 thin films have been grown on amorphous soda lime glass and polycrystalline silicon substrates from TiI 4 and H 2 O 2 by atomic layer deposition (ALD) in the temperature range 250±490 C. The film growth rate and refractive index increased linearly with growth temperature up to 300 C. Between 3