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Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors

✍ Scribed by Hausmann, Dennis M.; Kim, Esther; Becker, Jill; Gordon, Roy G.

Book ID
119967568
Publisher
American Chemical Society
Year
2002
Tongue
English
Weight
248 KB
Volume
14
Category
Article
ISSN
0897-4756

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Atomic Layer Deposition of Hafnium and Z
Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
✍ Hausmann, Dennis M.; Kim, Esther; Becker, Jill; Gordon, Roy G. πŸ“‚ Article πŸ“… 2002 πŸ› American Chemical Society 🌐 English βš– 248 KB

Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an oxygen source during these experiments. As deposited, these films exhibited a smooth surface with a mea