Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides
β Scribed by Becker, Jill S.; Kim, Esther; Gordon, Roy G.
- Book ID
- 120039228
- Publisher
- American Chemical Society
- Year
- 2004
- Tongue
- English
- Weight
- 107 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0897-4756
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π SIMILAR VOLUMES
Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an oxygen source during these experiments. As deposited, these films exhibited a smooth surface with a mea
## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250βΒ°C and 350βΒ°C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300βΒ°C, whereas the growth was essentially slow