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Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides

✍ Scribed by Becker, Jill S.; Kim, Esther; Gordon, Roy G.


Book ID
120039228
Publisher
American Chemical Society
Year
2004
Tongue
English
Weight
107 KB
Volume
16
Category
Article
ISSN
0897-4756

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Atomic Layer Deposition of Hafnium and Z
✍ Hausmann, Dennis M.; Kim, Esther; Becker, Jill; Gordon, Roy G. πŸ“‚ Article πŸ“… 2002 πŸ› American Chemical Society 🌐 English βš– 248 KB

Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an oxygen source during these experiments. As deposited, these films exhibited a smooth surface with a mea

Atomic Layer Deposition of Hafnium Dioxi
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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow