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Atomic layer deposition of hafnium and zirconium silicate thin films

✍ Scribed by E. Vainonen-Ahlgren; E. Tois; T. Ahlgren; L. Khriachtchev; J. Marles; S. Haukka; M. Tuominen


Book ID
117626838
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
142 KB
Volume
27
Category
Article
ISSN
0927-0256

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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow