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Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

✍ Scribed by Y.C. Chang; M.L. Huang; Y.H. Chang; Y.J. Lee; H.C. Chiu; J. Kwo; M. Hong

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
733 KB
Volume
88
Category
Article
ISSN
0167-9317

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